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BFP740E6327HTSA1 Технические параметры

Infineon Technologies  BFP740E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 4.7V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 160mW
Base Part Number BFP740
Power - Max 160mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA 3V
Gain 27dB
Max Breakdown Voltage 4.7V
Frequency - Transition 42GHz
Collector Base Voltage (VCBO) 13V
Noise Figure (dB Typ @ f) 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
RoHS Status RoHS Compliant
Просмотр сходства
BFP740E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFP740E6327HTSA1 reference price.Infineon Technologies. BFP740E6327HTSA1 parameters, BFP740E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFP740E6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP740E6327HTSA1 pin diagram and circuit diagram and usage method of function,BFP740E6327HTSA1 electronics tutorials.You can download from the Anli.