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BFP740FESDH6327XTSA1 Технические параметры

Infineon Technologies  BFP740FESDH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 160mW
Terminal Position DUAL
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP740
Reference Standard AEC-Q101
Configuration SINGLE
Power - Max 160mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.2V
Max Collector Current 45mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA 3V
Gain 9dB ~ 31dB
Transition Frequency 47000MHz
Frequency - Transition 47GHz
Collector Base Voltage (VCBO) 4.9V
Highest Frequency Band X B
Noise Figure (dB Typ @ f) 0.5dB ~ 1.45dB @ 150MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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