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BFP760H6327XTSA1 Технические параметры
Infineon Technologies BFP760H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Collector-Emitter Breakdown Voltage | 4V | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2013 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 240mW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BFP760 | |
| Power - Max | 240mW | |
| Halogen Free | Halogen Free | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 4V | |
| Max Collector Current | 70mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 35mA 3V | |
| Gain | 16.5dB ~ 29dB | |
| Max Breakdown Voltage | 4V | |
| Frequency - Transition | 45GHz | |
| Collector Base Voltage (VCBO) | 13V | |
| Noise Figure (dB Typ @ f) | 0.5dB ~ 0.95dB @ 900MHz ~ 5.5GHz | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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