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BFP840FESDH6327XTSA1 Технические параметры

Infineon Technologies  BFP840FESDH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Transistor Element Material SILICON GERMANIUM CARBON
Collector-Emitter Breakdown Voltage 2.6V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 75mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Frequency 85GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP840
Element Configuration Dual
Power Dissipation 75mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 10mA 1.8V
Gain 35dB
Transition Frequency 85000MHz
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Emitter Base Voltage (VEBO) 2.6V
Continuous Collector Current 35mA
Noise Figure (dB Typ @ f) 0.75dB @ 5.5GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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