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BFP842ESDH6327XTSA1 Технические параметры

Infineon Technologies  BFP842ESDH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Number of Pins 4Pins
Collector-Emitter Breakdown Voltage 3.7V
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 120mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Frequency 60GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP842
Halogen Free Halogen Free
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3.25V
Max Collector Current 40mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA 2.5V
Gain 26dB
Max Breakdown Voltage 3.7V
Collector Base Voltage (VCBO) 4.1V
Emitter Base Voltage (VEBO) 4.1V
Continuous Collector Current 40mA
Noise Figure (dB Typ @ f) 0.65dB @ 3.5GHz
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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