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BFR181E6327HTSA1 Технические параметры

Infineon Technologies  BFR181E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 20mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 175mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 20mA
Свойство продукта Значение свойства
Frequency 8GHz
Base Part Number BFR181
Element Configuration Single
Power Dissipation 175mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 8V
Gain 18.5dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.45pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Height 900μm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR181E6327HTSA1 Документы

BFR181E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR181E6327HTSA1 reference price.Infineon Technologies. BFR181E6327HTSA1 parameters, BFR181E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFR181E6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR181E6327HTSA1 pin diagram and circuit diagram and usage method of function,BFR181E6327HTSA1 electronics tutorials.You can download from the Anli.