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BFR182E6327HTSA1 Технические параметры

Infineon Technologies  BFR182E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 35mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR182
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 8V
Gain 12dB ~ 18dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.5pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant

BFR182E6327HTSA1 Документы

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