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BFR182WH6327XTSA1 Технические параметры

Infineon Technologies  BFR182WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 35mA
Number of Elements 1 Element
hFEMin 50
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 250mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR182
Configuration SINGLE
Test Frequency 900MHz
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 10mA 8V
Gain 19dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.5pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BFR182WH6327XTSA1 Документы

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