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BFR183E6327HTSA1 Технические параметры

Infineon Technologies  BFR183E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Published 2014
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 450mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Current Rating 65mA
Frequency 8GHz
Base Part Number BFR183
Configuration SINGLE
Power Dissipation 450mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 17.5dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.6pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Radiation Hardening No
REACH SVHC No SVHC
Lead Free Lead Free
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BFR183E6327HTSA1 Документы

BFR183E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR183E6327HTSA1 reference price.Infineon Technologies. BFR183E6327HTSA1 parameters, BFR183E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFR183E6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR183E6327HTSA1 pin diagram and circuit diagram and usage method of function,BFR183E6327HTSA1 electronics tutorials.You can download from the Anli.