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BFR183WH6327XTSA1 Технические параметры

Infineon Technologies  BFR183WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Current-Collector (Ic) (Max) 65mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 450mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form GULL WING
Frequency 8GHz
Base Part Number BFR183
Configuration SINGLE
Power Dissipation 450mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 18.5dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.7pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Radiation Hardening No
RoHS Status RoHS Compliant

BFR183WH6327XTSA1 Документы

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