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BFR193FH6327XTSA1 Технические параметры

Infineon Technologies  BFR193FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 580mW
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR193
Configuration SINGLE
Power Dissipation 580mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 80mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 12.5dB
Transition Frequency 8000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR193FH6327XTSA1 Документы

BFR193FH6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR193FH6327XTSA1 reference price.Infineon Technologies. BFR193FH6327XTSA1 parameters, BFR193FH6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFR193FH6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR193FH6327XTSA1 pin diagram and circuit diagram and usage method of function,BFR193FH6327XTSA1 electronics tutorials.You can download from the Anli.