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BFR340FH6327XTSA1 Технические параметры

Infineon Technologies  BFR340FH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 6V
Current-Collector (Ic) (Max) 20mA
Number of Elements 1 Element
hFEMin 60
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 60mW
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 14GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR340
Configuration SINGLE
Test Frequency 1.8GHz
Power Dissipation 60mW
Power - Max 75mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 6V
Max Collector Current 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 5mA 3V
Gain 13dB ~ 28dB
Voltage - Collector Emitter Breakdown (Max) 9V
Transition Frequency 14000MHz
Max Breakdown Voltage 9V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.4pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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