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BFR720L3RHE6327XTSA1 Технические параметры

Infineon Technologies  BFR720L3RHE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Transistor Element Material SILICON GERMANIUM
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 80mW
Terminal Position BOTTOM
Base Part Number BFR720
Свойство продукта Значение свойства
Configuration SINGLE
Case Connection EMITTER
Power - Max 80mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 13mA 3V
Gain 24dB
Transition Frequency 45000MHz
Max Breakdown Voltage 4.7V
Frequency - Transition 45GHz
Collector Base Voltage (VCBO) 13V
Highest Frequency Band X B
Noise Figure (dB Typ @ f) 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Radiation Hardening No
RoHS Status RoHS Compliant
Просмотр сходства

BFR720L3RHE6327XTSA1 Документы

BFR720L3RHE6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR720L3RHE6327XTSA1 reference price.Infineon Technologies. BFR720L3RHE6327XTSA1 parameters, BFR720L3RHE6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFR720L3RHE6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR720L3RHE6327XTSA1 pin diagram and circuit diagram and usage method of function,BFR720L3RHE6327XTSA1 electronics tutorials.You can download from the Anli.