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BFR740L3RHE6327XTSA1 Технические параметры

Infineon Technologies  BFR740L3RHE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Transistor Element Material SILICON GERMANIUM
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 4V
Max Power Dissipation 160mW
Terminal Position BOTTOM
Current Rating 30mA
Свойство продукта Значение свойства
Frequency 42GHz
Base Part Number BFR740
Configuration SINGLE
Power Dissipation 160mW
Case Connection EMITTER
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 25mA 3V
Gain 24.5dB
Voltage - Collector Emitter Breakdown (Max) 4.7V
Transition Frequency 42000MHz
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR740L3RHE6327XTSA1 Документы

BFR740L3RHE6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR740L3RHE6327XTSA1 reference price.Infineon Technologies. BFR740L3RHE6327XTSA1 parameters, BFR740L3RHE6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFR740L3RHE6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR740L3RHE6327XTSA1 pin diagram and circuit diagram and usage method of function,BFR740L3RHE6327XTSA1 electronics tutorials.You can download from the Anli.