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BFR750L3RHE6327XTSA1 Технические параметры

Infineon Technologies  BFR750L3RHE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 4.7V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Max Power Dissipation 360mW
Frequency 37GHz
Base Part Number BFR750
Power Dissipation 360mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 90mA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 60mA 3V
Gain 21dB
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
Noise Figure (dB Typ @ f) 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
RoHS Status RoHS Compliant
Просмотр сходства

BFR750L3RHE6327XTSA1 Документы

BFR750L3RHE6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR750L3RHE6327XTSA1 reference price.Infineon Technologies. BFR750L3RHE6327XTSA1 parameters, BFR750L3RHE6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFR750L3RHE6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR750L3RHE6327XTSA1 pin diagram and circuit diagram and usage method of function,BFR750L3RHE6327XTSA1 electronics tutorials.You can download from the Anli.