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BFR843EL3E6327XTSA1 Технические параметры

Infineon Technologies  BFR843EL3E6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 8 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 3-XFDFN
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 2.6V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e4
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Gold (Au)
Max Power Dissipation 125mW
Свойство продукта Значение свойства
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE
Case Connection EMITTER
Power - Max 125mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 2.25V
Max Collector Current 55mA
Gain 25.5dB
Max Breakdown Voltage 2.6V
Collector Base Voltage (VCBO) 2.9V
Highest Frequency Band X B
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BFR843EL3E6327XTSA1 Документы

BFR843EL3E6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFR843EL3E6327XTSA1 reference price.Infineon Technologies. BFR843EL3E6327XTSA1 parameters, BFR843EL3E6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFR843EL3E6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR843EL3E6327XTSA1 pin diagram and circuit diagram and usage method of function,BFR843EL3E6327XTSA1 electronics tutorials.You can download from the Anli.