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BFR 93AW E6327 Технические параметры

Infineon Technologies  BFR 93AW E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 90mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Base Part Number BFR93
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Power - Max 300mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 10.5dB ~ 15.5dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 6000MHz
Frequency - Transition 6GHz
Power Dissipation-Max (Abs) 0.3W
Highest Frequency Band L B
Collector-Base Capacitance-Max 0.9pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant

BFR 93AW E6327 Документы

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