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BFR93AWH6327XTSA1 Технические параметры

Infineon Technologies  BFR93AWH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 6GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFR93
Configuration SINGLE
Power Dissipation 300mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 90mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA 8V
Gain 10.5dB ~ 15.5dB
Transition Frequency 6000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
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