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BFR 949L3 E6327 Технические параметры

Infineon Technologies  BFR 949L3 E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case SC-101, SOT-883
Surface Mount YES
Current-Collector (Ic) (Max) 50mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Reach Compliance Code unknown
Свойство продукта Значение свойства
Configuration Single
Power - Max 250mW
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA 6V
Gain 21.5dB
Voltage - Collector Emitter Breakdown (Max) 10V
Transition Frequency 7000MHz
Frequency - Transition 9GHz
Power Dissipation-Max (Abs) 0.25W
Noise Figure (dB Typ @ f) 1dB ~ 2.5dB @ 1GHz
RoHS Status RoHS Compliant
Просмотр сходства

BFR 949L3 E6327 Документы

BFR 949L3 E6327 brand manufacturers: Infineon Technologies, Anli stock, BFR 949L3 E6327 reference price.Infineon Technologies. BFR 949L3 E6327 parameters, BFR 949L3 E6327 Datasheet PDF and pin diagram description download.You can use the BFR 949L3 E6327 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFR 949L3 E6327 pin diagram and circuit diagram and usage method of function,BFR 949L3 E6327 electronics tutorials.You can download from the Anli.