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BFS17SE6327HTSA1 Технические параметры

Infineon Technologies  BFS17SE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 15V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Max Power Dissipation 280mW
Frequency 2.5GHz
Base Part Number BFS17
Polarity NPN
Power Dissipation 280mW
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 2.5V
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 800MHz
RoHS Status RoHS Compliant
Просмотр сходства

BFS17SE6327HTSA1 Документы

BFS17SE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFS17SE6327HTSA1 reference price.Infineon Technologies. BFS17SE6327HTSA1 parameters, BFS17SE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFS17SE6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS17SE6327HTSA1 pin diagram and circuit diagram and usage method of function,BFS17SE6327HTSA1 electronics tutorials.You can download from the Anli.