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BFS17SH6327XTSA1 Технические параметры

Infineon Technologies  BFS17SH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 280mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 2.5GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFS17
Polarity NPN
Power Dissipation 280mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Transition Frequency 2500MHz
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3dB ~ 5dB @ 800MHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BFS17SH6327XTSA1 Документы

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