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BFS17WE6327HTSA1 Технические параметры

Infineon Technologies  BFS17WE6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Current-Collector (Ic) (Max) 25mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Max Power Dissipation 280mW
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFS17
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Transition Frequency 2500MHz
Frequency - Transition 1.4GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz
RoHS Status RoHS Compliant
Просмотр сходства
BFS17WE6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFS17WE6327HTSA1 reference price.Infineon Technologies. BFS17WE6327HTSA1 parameters, BFS17WE6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BFS17WE6327HTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS17WE6327HTSA1 pin diagram and circuit diagram and usage method of function,BFS17WE6327HTSA1 electronics tutorials.You can download from the Anli.