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BFS17WH6327XTSA1 Технические параметры

Infineon Technologies  BFS17WH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 15V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 2.5GHz
Свойство продукта Значение свойства
Base Part Number BFS17
Configuration SINGLE
Power Dissipation 280mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 15V
Max Collector Current 25mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 2mA 1V
Transition Frequency 2500MHz
Max Breakdown Voltage 15V
Frequency - Transition 1.4GHz
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 2.5V
Collector-Base Capacitance-Max 0.8pF
Noise Figure (dB Typ @ f) 3.5dB ~ 5dB @ 800MHz
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BFS17WH6327XTSA1 Документы

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