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BFS 481 E6327 Технические параметры

Infineon Technologies  BFS 481 E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 20mA
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BFS481
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS
Power - Max 175mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 8V
Gain 20dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.4pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant
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BFS 481 E6327 Документы

BFS 481 E6327 brand manufacturers: Infineon Technologies, Anli stock, BFS 481 E6327 reference price.Infineon Technologies. BFS 481 E6327 parameters, BFS 481 E6327 Datasheet PDF and pin diagram description download.You can use the BFS 481 E6327 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS 481 E6327 pin diagram and circuit diagram and usage method of function,BFS 481 E6327 electronics tutorials.You can download from the Anli.