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BFS481H6327XTSA1 Технические параметры

Infineon Technologies  BFS481H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 175mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 8GHz
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFS481
Reference Standard AEC-Q101
Polarity NPN
Power Dissipation 175mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 8V
Gain 20dB
Transition Frequency 8000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.4pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства
BFS481H6327XTSA1 brand manufacturers: Infineon Technologies, Anli stock, BFS481H6327XTSA1 reference price.Infineon Technologies. BFS481H6327XTSA1 parameters, BFS481H6327XTSA1 Datasheet PDF and pin diagram description download.You can use the BFS481H6327XTSA1 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS481H6327XTSA1 pin diagram and circuit diagram and usage method of function,BFS481H6327XTSA1 electronics tutorials.You can download from the Anli.