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BFS 483 E6327 Технические параметры

Infineon Technologies  BFS 483 E6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Current-Collector (Ic) (Max) 65mA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Свойство продукта Значение свойства
Base Part Number BFS483
Power - Max 450mW
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 19dB
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 6000MHz
Frequency - Transition 8GHz
Power Dissipation-Max (Abs) 0.45W
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
RoHS Status RoHS Compliant
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BFS 483 E6327 Документы

BFS 483 E6327 brand manufacturers: Infineon Technologies, Anli stock, BFS 483 E6327 reference price.Infineon Technologies. BFS 483 E6327 parameters, BFS 483 E6327 Datasheet PDF and pin diagram description download.You can use the BFS 483 E6327 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFS 483 E6327 pin diagram and circuit diagram and usage method of function,BFS 483 E6327 electronics tutorials.You can download from the Anli.