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BFS483H6327XTSA1 Технические параметры

Infineon Technologies  BFS483H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 12V
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Max Power Dissipation 450mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFS483
Reference Standard AEC-Q101
Polarity NPN
Power Dissipation 450mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 65mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 15mA 8V
Gain 19dB
Transition Frequency 8000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.54pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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