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BG3123RH6327XTSA1 Технические параметры
Infineon Technologies BG3123RH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Mount | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Number of Elements | 2 Elements | |
| Voltage Rated | 8V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | LOW NOISE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current Rating (Amps) | 25mA 20mA | |
| Max Power Dissipation | 200mW | |
| Terminal Form | GULL WING | |
| Current Rating | 20mA | |
| Frequency | 800MHz | |
| Base Part Number | BG3123 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Current - Test | 14mA | |
| Transistor Application | AMPLIFIER | |
| Transistor Type | 2 N-Channel (Dual) | |
| Continuous Drain Current (ID) | 25mA | |
| Gain | 25dB | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | 1.8dB | |
| Voltage - Test | 5V | |
| RoHS Status | RoHS Compliant |
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