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BG3130E6327HTSA1 Технические параметры

Infineon Technologies  BG3130E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - RF
Марка
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Number of Elements 2 Elements
Voltage Rated 8V
Packaging Tape & Reel (TR)
Published 2005
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Additional Feature LOW NOISE
Terminal Form GULL WING
Current Rating 25mA
Свойство продукта Значение свойства
Frequency 800MHz
Base Part Number BG3130
JESD-30 Code R-PDSO-G6
Operating Mode DUAL GATE, DEPLETION MODE
Current - Test 14mA
Transistor Application AMPLIFIER
Transistor Type 2 N-Channel (Dual)
Gain 24dB
Drain Current-Max (Abs) (ID) 0.025A
DS Breakdown Voltage-Min 12V
FET Technology METAL-OXIDE SEMICONDUCTOR
Noise Figure 1.3dB
Voltage - Test 5V
RoHS Status RoHS Compliant
Просмотр сходства

BG3130E6327HTSA1 Документы

BG3130E6327HTSA1 brand manufacturers: Infineon Technologies, Anli stock, BG3130E6327HTSA1 reference price.Infineon Technologies. BG3130E6327HTSA1 parameters, BG3130E6327HTSA1 Datasheet PDF and pin diagram description download.You can use the BG3130E6327HTSA1 Transistors - FETs, MOSFETs - RF, DSP Datesheet PDF, find BG3130E6327HTSA1 pin diagram and circuit diagram and usage method of function,BG3130E6327HTSA1 electronics tutorials.You can download from the Anli.