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BSC057N03MSGATMA1 Технические параметры

Infineon Technologies  BSC057N03MSGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 15A Ta 71A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 45W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±16V
Drain Current-Max (Abs) (ID) 15A
Drain-source On Resistance-Max 0.0072Ohm
Pulsed Drain Current-Max (IDM) 284A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 25 mJ
RoHS Status ROHS3 Compliant

BSC057N03MSGATMA1 Документы

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