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BSC079N03LSCGATMA1 Технические параметры

Infineon Technologies  BSC079N03LSCGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14A Ta 50A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 30W Tc
Turn Off Delay Time 14 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2004
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 2.4ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSC079N03LSCGATMA1 Документы

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