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BSC0802LSATMA1 Технические параметры
Infineon Technologies BSC0802LSATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | PG-TDSON-8-7 | |
| Mfr | Infineon Technologies | |
| Product Status | Not For New Designs | |
| Current - Continuous Drain (Id) @ 25℃ | 20A (Ta), 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 156W (Tc) | |
| Base Product Number | BSC0802 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | - | |
| Continuous Drain Current Id | 100A | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Typical Turn-On Delay Time | 9.6 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V | |
| Pd - Power Dissipation | 156 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 5000 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 60 S | |
| Channel Mode | Enhancement |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part # Aliases | BSC0802LS SP001614074 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| Qg - Gate Charge | 37 nC | |
| Rds On - Drain-Source Resistance | 3.5 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 40 ns | |
| Id - Continuous Drain Current | 100 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | MouseReel | |
| Subcategory | MOSFETs | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 156W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 3.4mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 2.3V @ 115μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 4.5 V | |
| Rise Time | 10 ns | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Vgs (Max) | ±20V | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product Category | MOSFET |
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