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BSC080N12LSGATMA1 Технические параметры

Infineon Technologies  BSC080N12LSGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TDSON-8
Mfr Infineon Technologies
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 12A (Ta), 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 156W (Tc)
Qualification -
Continuous Drain Current Id 99A
Vds - Drain-Source Breakdown Voltage 120 V
Typical Turn-On Delay Time 11 ns
Vgs th - Gate-Source Threshold Voltage 2.4 V
Pd - Power Dissipation 156 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 5000
Mounting Styles SMD/SMT
Forward Transconductance - Min 60 S
Channel Mode Enhancement
Part # Aliases BSC080N12LS G SP002256844
Свойство продукта Значение свойства
Manufacturer Infineon
Brand Infineon Technologies
Qg - Gate Charge 79 nC
Rds On - Drain-Source Resistance 8 mOhms
Typical Turn-Off Delay Time 37 ns
Id - Continuous Drain Current 99 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Cut Tape
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
Power Dissipation 156W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 112μA
Input Capacitance (Ciss) (Max) @ Vds 7400 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Rise Time 9 ns
Drain to Source Voltage (Vdss) 120 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
Channel Type N Channel
FET Feature -
Product Category MOSFET
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