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BSC084P03NS3GATMA1 Технические параметры

Infineon Technologies  BSC084P03NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 13 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 14.9A Ta 78.6A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 2.5W Ta 69W Tc
Turn Off Delay Time 33 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2006
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.4m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.1V @ 105μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Rise Time 134ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Fall Time (Typ) 8 ns
Continuous Drain Current (ID) 14.5A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Pulsed Drain Current-Max (IDM) 200A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

BSC084P03NS3GATMA1 Документы

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