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BSC0910NDIATMA1 Технические параметры

Infineon Technologies  BSC0910NDIATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11A 31A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 1W
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N6
Configuration SERIES, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.6m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 6.6nC @ 4.5V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 31A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.0059Ohm
DS Breakdown Voltage-Min 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
RoHS Status ROHS3 Compliant

BSC0910NDIATMA1 Документы

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