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BSC0911NDATMA1 Технические параметры

Infineon Technologies  BSC0911NDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 18A 30A
Number of Elements 2 Elements
Turn Off Delay Time 25 ns
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Свойство продукта Значение свойства
Max Power Dissipation 1W
JESD-30 Code R-PDSO-N6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 3.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Rise Time 5.4ns
Fall Time (Typ) 4 ns
Continuous Drain Current (ID) 30A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 25V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BSC0911NDATMA1 Документы

BSC0911NDATMA1 brand manufacturers: Infineon Technologies, Anli stock, BSC0911NDATMA1 reference price.Infineon Technologies. BSC0911NDATMA1 parameters, BSC0911NDATMA1 Datasheet PDF and pin diagram description download.You can use the BSC0911NDATMA1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BSC0911NDATMA1 pin diagram and circuit diagram and usage method of function,BSC0911NDATMA1 electronics tutorials.You can download from the Anli.