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BSC0925NDATMA1 Технические параметры

Infineon Technologies  BSC0925NDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 17 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 2.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Pin Count 8
JESD-30 Code R-PDSO-F6
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN SOURCE
Turn On Delay Time 4.7 ns
FET Type 2 N Channel (Dual Buck Chopper)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1157pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Rise Time 3.8ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 11A
Drain-source On Resistance-Max 0.007Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 14 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
RoHS Status ROHS3 Compliant

BSC0925NDATMA1 Документы

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