[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

BSC105N10LSFGATMA1 Технические параметры

Infineon Technologies  BSC105N10LSFGATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 16 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 11.4A Ta 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Number of Elements 1 Element
Power Dissipation (Max) 156W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2007
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.4V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V
Rise Time 26ns
Vgs (Max) ±20V
Continuous Drain Current (ID) 11.4A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 377 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

BSC105N10LSFGATMA1 Документы

BSC105N10LSFGATMA1 brand manufacturers: Infineon Technologies, Anli stock, BSC105N10LSFGATMA1 reference price.Infineon Technologies. BSC105N10LSFGATMA1 parameters, BSC105N10LSFGATMA1 Datasheet PDF and pin diagram description download.You can use the BSC105N10LSFGATMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSC105N10LSFGATMA1 pin diagram and circuit diagram and usage method of function,BSC105N10LSFGATMA1 electronics tutorials.You can download from the Anli.