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BSC110N15NS5SCATMA1 Технические параметры

Infineon Technologies  BSC110N15NS5SCATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TDSON-8-7
Mfr Infineon Technologies
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Power Dissipation (Max) 125W (Tc)
Factory Pack QuantityFactory Pack Quantity 4000
Part # Aliases BSC110N15NS5SC SP005561075
Manufacturer Infineon
Brand Infineon Technologies
RoHS Details
Vds - Drain-Source Breakdown Voltage 150 V
Vgs th - Gate-Source Threshold Voltage 3 V
Pd - Power Dissipation 150 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Свойство продукта Значение свойства
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 28 nC
Rds On - Drain-Source Resistance 11 mOhms
Id - Continuous Drain Current 77 A
Operating Temperature -55°C ~ 150°C (TJ)
Packaging Reel
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4.6V @ 91μA
Input Capacitance (Ciss) (Max) @ Vds 2770 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Drain to Source Voltage (Vdss) 150 V
Vgs (Max) ±20V
Product Type MOSFET
FET Feature -
Product Category MOSFET
Просмотр сходства
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