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BSC160N10NS3GATMA1 Технические параметры

Infineon Technologies  BSC160N10NS3GATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 8.8A Ta 42A Tc
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 60W Tc
Turn Off Delay Time 22 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2008
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 60W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 16m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 15ns
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 50 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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