Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon Technologies BSD223PH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 5.1 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2002 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| HTS Code | 8541.21.00.95 | |
| Voltage - Rated DC | -20V | |
| Max Power Dissipation | 250mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Current Rating | -350mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BSD223 | |
| Reference Standard | AEC-Q101 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Turn On Delay Time | 3.8 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 390mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1.5μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V | |
| Rise Time | 5ns | |
| Drain to Source Voltage (Vdss) | 20V | |
| Continuous Drain Current (ID) | 390mA | |
| Gate to Source Voltage (Vgs) | 12V | |
| Max Dual Supply Voltage | -20V | |
| Drain Current-Max (Abs) (ID) | 0.39A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Feedback Cap-Max (Crss) | 22 pF | |
| Height | 800μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |