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BSD235CH6327XTSA1 Технические параметры
Infineon Technologies BSD235CH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 950mA 530mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2012 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | AVALANCHE RATED | |
| HTS Code | 8541.21.00.95 | |
| Max Power Dissipation | 500mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BSD235 | |
| Reference Standard | AEC-Q101 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N and P-Channel | |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 950mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1.2V @ 1.6μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 530mA | |
| Gate to Source Voltage (Vgs) | 12V | |
| Max Dual Supply Voltage | -20V | |
| Drain Current-Max (Abs) (ID) | 0.95A | |
| Drain-source On Resistance-Max | 0.35Ohm | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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