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BSD840NH6327XTSA1 Технические параметры

Infineon Technologies  BSD840NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 7.8 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Max Power Dissipation 500mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BSD840
Свойство продукта Значение свойства
Pin Count 6
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 1.9 ns
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 400m Ω @ 880mA, 2.5V
Vgs(th) (Max) @ Id 750mV @ 1.6μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
Rise Time 2.2ns
Continuous Drain Current (ID) 880mA
Threshold Voltage 550mV
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain Current-Max (Abs) (ID) 3.5A
Drain-source On Resistance-Max 0.4Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 1mm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BSD840NH6327XTSA1 Документы

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