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Infineon Technologies BSD840NH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-VSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 7.8 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | OptiMOS™ | |
| Published | 2011 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Max Power Dissipation | 500mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BSD840 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 500mW | |
| Turn On Delay Time | 1.9 ns | |
| FET Type | 2 N-Channel (Dual) | |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 880mA, 2.5V | |
| Vgs(th) (Max) @ Id | 750mV @ 1.6μA | |
| Halogen Free | Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V | |
| Rise Time | 2.2ns | |
| Continuous Drain Current (ID) | 880mA | |
| Threshold Voltage | 550mV | |
| Gate to Source Voltage (Vgs) | 8V | |
| Max Dual Supply Voltage | 20V | |
| Drain Current-Max (Abs) (ID) | 3.5A | |
| Drain-source On Resistance-Max | 0.4Ohm | |
| Drain to Source Breakdown Voltage | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Logic Level Gate | |
| Height | 1mm | |
| Length | 2mm | |
| Width | 1.25mm | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |