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BSD840N L6327 Технические параметры

Infineon Technologies  BSD840N L6327 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 880mA
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BSD840
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 500mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 400m Ω @ 880mA, 2.5V
Vgs(th) (Max) @ Id 750mV @ 1.6μA
Input Capacitance (Ciss) (Max) @ Vds 78pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.26nC @ 2.5V
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 0.88A
Drain-source On Resistance-Max 0.4Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.5W
FET Feature Logic Level Gate
RoHS Status RoHS Compliant

BSD840N L6327 Документы

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