[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

BSG0810NDIATMA1 Технические параметры

Infineon Technologies  BSG0810NDIATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A 39A
Number of Elements 2 Elements
Operating Temperature -55°C~155°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
Terminal Finish Tin (Sn)
Max Power Dissipation 2.5W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N7
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Power - Max 2.5W
FET Type 2 N-Channel (Dual) Asymmetrical
Rds On (Max) @ Id, Vgs 3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 30 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Просмотр сходства

BSG0810NDIATMA1 Документы

BSG0810NDIATMA1 brand manufacturers: Infineon Technologies, Anli stock, BSG0810NDIATMA1 reference price.Infineon Technologies. BSG0810NDIATMA1 parameters, BSG0810NDIATMA1 Datasheet PDF and pin diagram description download.You can use the BSG0810NDIATMA1 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find BSG0810NDIATMA1 pin diagram and circuit diagram and usage method of function,BSG0810NDIATMA1 electronics tutorials.You can download from the Anli.