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BSG0811NDATMA1 Технические параметры

Infineon Technologies  BSG0811NDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 19A 41A
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
Max Power Dissipation 2.5W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PDSO-N7
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Power - Max 2.5W
FET Type 2 N-Channel (Dual) Asymmetrical
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 8.4nC @ 4.5V
Continuous Drain Current (ID) 41A
Max Dual Supply Voltage 25V
Drain Current-Max (Abs) (ID) 19A
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 160A
Avalanche Energy Rating (Eas) 30 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 4.5V Drive
RoHS Status ROHS3 Compliant
Lead Free Contains Lead

BSG0811NDATMA1 Документы

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