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BSM75GAL120DN2HOSA1 Технические параметры

Infineon Technologies  BSM75GAL120DN2HOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 105A
Number of Elements 1 Element
Operating Temperature 150°C TJ
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
Pin Count 7
JESD-30 Code R-XUFM-X7
Configuration Single Switch
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1.4mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 75A
Turn Off Time-Nom (toff) 520 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 5.5nF @ 25V
RoHS Status ROHS3 Compliant

BSM75GAL120DN2HOSA1 Документы

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