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BSM75GB120DN2_E3223C-SE Технические параметры

Infineon Technologies  BSM75GB120DN2_E3223C-SE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mfr Infineon Technologies
Package Bulk
Product Status Active
Pd - Power Dissipation 625 W
Maximum Operating Temperature + 150 C
Collector-Emitter Saturation Voltage 2.5 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 10
Continuous Collector Current at 25 C 105 A
Свойство продукта Значение свойства
Part # Aliases SP000100719
Manufacturer Infineon
Brand Infineon Technologies
Collector- Emitter Voltage VCEO Max 1200 V
Series *
Subcategory IGBTs
Configuration Half Bridge
Product Type IGBT Modules
Continuous Collector Current 105
Product IGBT Silicon Modules
Product Category IGBT Modules
Просмотр сходства

BSM75GB120DN2_E3223C-SE Документы

  • Datasheets
BSM75GB120DN2_E3223C-SE brand manufacturers: Infineon Technologies, Anli stock, BSM75GB120DN2_E3223C-SE reference price.Infineon Technologies. BSM75GB120DN2_E3223C-SE parameters, BSM75GB120DN2_E3223C-SE Datasheet PDF and pin diagram description download.You can use the BSM75GB120DN2_E3223C-SE Transistors - IGBTs - Modules, DSP Datesheet PDF, find BSM75GB120DN2_E3223C-SE pin diagram and circuit diagram and usage method of function,BSM75GB120DN2_E3223C-SE electronics tutorials.You can download from the Anli.