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BSM75GB170DN2HOSA1 Технические параметры

Infineon Technologies  BSM75GB170DN2HOSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 34Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 1.7kV
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Published 1999
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7Terminations
ECCN Code EAR99
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Свойство продукта Значение свойства
JESD-30 Code R-XUFM-X7
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 110A
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 11nF
Turn On Time 550 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 75A
Turn Off Time-Nom (toff) 740 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 11nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free

BSM75GB170DN2HOSA1 Документы

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