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BSO080P03NS3EGXUMA1 Технические параметры

Infineon Technologies  BSO080P03NS3EGXUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 12A Ta
Drive Voltage (Max Rds On, Min Rds On) 6V 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.6W Ta
Turn Off Delay Time 64 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8m Ω @ 14.8A, 10V
Vgs(th) (Max) @ Id 3.1V @ 150μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 6750pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
Rise Time 47ns
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±25V
Fall Time (Typ) 19 ns
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 25V
Max Dual Supply Voltage -30V
Avalanche Energy Rating (Eas) 149 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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BSO080P03NS3EGXUMA1 Документы

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